| PART |
Description |
Maker |
| K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I6418 |
72Mb DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
| GS8642ZV36B-300I GS8642ZV36GB-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 5.5 ns, PBGA119
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| K7K1636U2C K7K1618U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K1636T2C K7K1618T2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| R1QLA3636CBG R1QLA3618CBG |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| GS8662D08GE-200 GS8662D08GE-333I GS8662D08GE-250I |
72Mb SigmaQuad-II Burst of 4 SRAM
|
http://
GSI Technology
|
| UPD44324082F5-E40-EQ2 UPD44324082F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
